Semiconductor device

ABSTRACT

A semiconductor device of embodiments includes: a die pad; a semiconductor chip fixed on the die pad; and a sealing resin covering the semiconductor chip and at least a part of the die pad. The sealing resin has a first protruding portion provided on one side surface and a second protruding portion provided on another side surface. The cross-sectional area of the first protruding portion is equal to or more than 10% of the maximum cross-sectional area of the sealing resin. The cross-sectional area of the second protruding portion is equal to or more than 10%; of the maximum cross-sectional area. The maximum cross-sectional area is equal to or more than 6 mm2.

CROSS-REFERENCE TO RELATED APPLICATION

This application is based upon and claims the benefit of priority fromJapanese Patent Application No. 2021-152689, filed on Sep. 17, 2021, theentire contents of which are incorporated herein by reference.

FIELD

Embodiments described herein relate generally to a semiconductor device.

BACKGROUND

There is a transfer molding method as a resin sealing technology forsemiconductors. In the transfer molding method, a semiconductor packageis manufactured by filling a cavity, in which a semiconductor chip isprovided, with a resin melted in a plunger and curing the resin. Forexample, by filling a plurality of cavities connected to each other by athrough gate with a molten resin, the productivity of a semiconductorpackage is improved.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A, 1B, and 1C are schematic diagrams of a semiconductor device ofa first embodiment;

FIGS. 2A, 2B, and 2C are schematic cross-sectional views of thesemiconductor device of the first embodiment;

FIG. 3 is a schematic cross-sectional view showing an example of amethod of manufacturing the semiconductor device of the firstembodiment;

FIGS. 4A and 4B are schematic cross-sectional views showing an exampleof the method of manufacturing the semiconductor device of the firstembodiment;

FIG. 5 is a schematic cross-sectional view showing an example of themethod of manufacturing the semiconductor device of the firstembodiment;

FIG. 6 is a schematic cross-sectional view showing an example of themethod of manufacturing the semiconductor device of the firstembodiment;

FIGS. 7A and 7B are schematic cross-sectional views showing an exampleof the method of manufacturing the semiconductor device of the firstembodiment;

FIG. 8 is a schematic cross-sectional view showing an example of themethod of manufacturing the semiconductor device of the firstembodiment;

FIG. 9 is a schematic cross-sectional view showing an example of themethod of manufacturing the semiconductor device of the firstembodiment;

FIGS. 10A, 10B, and 10C are schematic diagrams of a comparative exampleof the semiconductor device of the first embodiment;

FIGS. 11A, 11B, and 11C are schematic cross-sectional views of thecomparative example of the semiconductor device of the first embodiment;

FIGS. 12A and 12B are schematic cross-sectional views showing an exampleof a manufacturing method of the comparative example of thesemiconductor device of the first embodiment;

FIG. 13 is a schematic cross-sectional view showing an example of themanufacturing method of the comparative example of the semiconductordevice of the first embodiment;

FIGS. 14A, 14B, and 14C are schematic cross-sectional views of asemiconductor device of a second embodiment;

FIGS. 15A and 15B are schematic cross-sectional views showing an exampleof a method of manufacturing the semiconductor device of the secondembodiment;

FIGS. 16A, 16B, and 16C are schematic diagrams of a semiconductor deviceof a third embodiment;

FIGS. 17A, 17B, and 17C are schematic diagrams of a semiconductor deviceof a fourth embodiment; and

FIGS. 18A, 18B, and 18C are schematic cross-sectional views of thesemiconductor device of the fourth embodiment.

DETAILED DESCRIPTION

A semiconductor device of embodiments includes: a die pad; asemiconductor chip fixed on the die pad; and a sealing resin coveringthe semiconductor chip and at least a part of the die pad, the sealingresin including a first side surface, a second side surface, a bottomsurface, and a top surface, the second side surface facing the firstside surface in a first direction, the top surface facing the bottomsurface in a second direction, the sealing resin including at least onefirst protruding portion provided on a side of the first side surfaceand at least one second protruding portion provided on a side of thesecond side surface, a cross-sectional area of the at least one firstprotruding portion on a cross section perpendicular to the firstdirection being equal to or more than 10% of a maximum cross-sectionalarea of the sealing resin on a cross section perpendicular to the firstdirection, a cross-sectional area of the at least one second protrudingportion on a cross section perpendicular to the first direction beingequal to or more than 10% of the maximum cross-sectional area, and themaximum cross-sectional area being equal to or more than 6 mm².

Hereinafter, embodiments will be described with reference to thediagrams. In the following description, the same or similar members andthe like may be denoted by the same reference numerals, and thedescription of the members and the like once described may be omitted asappropriate.

In this specification, the length and the like of the membersconfiguring the semiconductor device can be calculated from, forexample, an image of a scanning electron microscope (SEM).

First Embodiment

A semiconductor device of a first embodiment includes: a die pad; asemiconductor chip fixed on the die pad; and a sealing resin coveringthe semiconductor chip and at least a part of the die pad. The sealingresin has a first side surface and a second side surface facing thefirst side surface in a first direction and has a bottom surface and atop surface facing the bottom surface in a second direction. The sealingresin has at least one first protruding portion provided on a side ofthe first side surface and at least one second protruding portionprovided on a side of the second side surface. A cross-sectional area ofthe at least one first protruding portion on a cross sectionperpendicular to the first direction is equal to or more than 10% of amaximum cross-sectional area of the sealing resin on a cross sectionperpendicular to the first direction. A cross-sectional area of the atleast one second protruding portion on a cross section perpendicular tothe first direction is equal to or more than 10% of the maximumcross-sectional area. The maximum cross-sectional area is equal to ormore than 6 mm².

The semiconductor device of the first embodiment is a semiconductorpackage 100 in which a semiconductor chip is resin-sealed.

FIGS. 1A, 1B, and 1C are schematic diagrams of the semiconductor deviceof the first embodiment. FIG. 1A is a top view. FIG. 1B is across-sectional view. FIG. 1B is a cross-sectional view taken along theline AA′ of FIG. 1A. FIG. 1C is a cross-sectional view. FIG. 1C is across-sectional view taken along the line BB′ of FIG. 1A.

FIGS. 2A, 2B, and 2C are schematic cross-sectional views of thesemiconductor device of the first embodiment.

FIG. 2A is a cross-sectional view taken along the line CC′ of FIG. 1A.FIG. 2B is a cross-sectional view taken along the line DD′ of FIG. 1A.FIG. 2C is a cross-sectional view taken along the line EE′ of FIG. 1A.

The semiconductor package 100 includes a semiconductor chip 10, a diepad 12, a lead portion 14, a bonding wire 16, and a sealing resin 18.

The sealing resin 18 has a first side surface sf1, a second side surfacesf2, a third side surface sf3, a fourth side surface sf4, a bottomsurface bf, and a top surface tf. The sealing resin 18 has a firstprotruding portion 18 a and a second protruding portion 18 b.

Hereinafter, the direction from the first side surface sf1 to the secondside surface sf2 is defined as a first direction, the direction from thethird side surface sf3 to the fourth side surface sf4 is defined as athird direction, and the direction from the bottom surface bf to the topsurface tf is defined as a second direction.

The semiconductor chip 10 is, for example, a power semiconductor device.The semiconductor chip 10 is, for example, a metal oxide semiconductorfield effect transistor (MOSFET), an insulated gate bipolar transistor(IGBT), or a diode.

The semiconductor chip 10 is fixed on the die pad 12. The semiconductorchip 10 is fixed to the surface of the die pad 12 by using, for example,solder.

The die pad 12 has, for example, a rectangular shape. The die pad 12 isa metal. The die pad 12 is, for example, copper or a copper alloy.

The thickness of the die pad 12 is, for example, 0.5 mm.

The lead portion 14 is provided in the third direction of the die pad12. The lead portion 14 is a metal. The lead portion 14 is, for example,copper or a copper alloy. The lead portion 14 is formed of, for example,the same material as the die pad 12.

The thickness of the lead portion 14 is, for example, 0.5 mm.

The bonding wire 16 connects the semiconductor chip 10 and the leadportion 14 to each other. The bonding wire 16 electrically connects thesemiconductor chip 10 and the lead portion 14 to each other.

The bonding wire 16 is a metal wire. The bonding wire 16 contains, forexample, copper (Cu) or aluminum (Al). The bonding wire 16 is, forexample, a copper wire or an aluminum wire.

The sealing resin 18 covers the semiconductor chip 10 and the bondingwire 16. The sealing resin 18 covers at least a part of the die pad 12.The sealing resin 18 covers at least a part of the lead portion 14. Thesealing resin 18 has a function of protecting the semiconductor chip 10and the bonding wire 16.

The sealing resin 18 contains a resin. The sealing resin 18 contains,for example, an epoxy resin.

The sealing resin 18 has the first side surface sf1, the second sidesurface sf2, the third side surface sf3, the fourth side surface sf4,the bottom surface bf, and the top surface tf. The second side surfacesf2 faces the first side surface sf1 in the first direction. The fourthside surface sf4 faces the third side surface sf3 in the thirddirection. The top surface tf faces the bottom surface bf in the seconddirection.

The sealing resin 18 has the first protruding portion 18 a and thesecond protruding portion 18 b.

The first protruding portion 18 a is provided on the first side surfacesf1 side of the sealing resin 18. The first protruding portion 18 aprotrudes in the first direction.

The second protruding portion 18 b is provided on the second sidesurface sf2 side of the sealing resin 18. The second protruding portion18 b protrudes in the first direction.

The cross-sectional area of the first protruding portion 18 a on thecross section perpendicular to the first direction is equal to or morethan 10% and equal to or less than 50% of the maximum cross-sectionalarea of the sealing resin 18 on the cross section perpendicular to thefirst direction. For example, the area of the cross section of thesealing resin 18 shown in FIG. 2C is the maximum cross-sectional area ofthe sealing resin 18. For example, the area of the cross section of thefirst protruding portion 18 a shown in FIG. 2A is equal to or more than10% and equal to or less than 50% of the area of the cross section ofthe sealing resin 18 shown in FIG. 2C.

In addition, the cross-sectional area of the second protruding portion18 b on the cross section perpendicular to the first direction is equalto or more than 10% and equal to or less than 50% of the maximumcross-sectional area of the sealing resin 18 on the cross sectionperpendicular to the first direction. For example, the area of the crosssection of the second protruding portion 18 b shown in FIG. 2B is equalto or more than 10% and equal to or less than 50% of the area of thecross section of the sealing resin 18 shown in FIG. 2C.

The maximum cross-sectional area of the sealing resin 18 is equal to ormore than 6 mm².

The length (d1 in FIG. 2A) of the first protruding portion 18 a in thesecond direction is equal to or more than 100 μm and equal to or lessthan 1 mm, for example. In addition, the length (d2 in FIG. 2B) of thesecond protruding portion 18 b in the second direction is equal to ormore than 0.1 mm and equal to or less than 1 mm, for example.

The length of the first protruding portion 18 a in the third directionis equal to or more than 0.1 mm and equal to or less than 5 mm, forexample. In addition, the length of the second protruding portion 18 bin the third direction is equal to or more than 0.1 mm and equal to orless than 5 mm, for example.

The distance (d3 in FIG. 2C) between the top surface tf and the bottomsurface bf is equal to or more than 1 mm, for example. In other words,the thickness of the sealing resin 18 is equal to or more than 1 mm.

The length of the first protruding portion 18 a in the first directionis equal to or more than 0.05 mm and equal to or less than 2 mm, forexample. In addition, the length of the second protruding portion 18 bin the first direction is equal to or more than 0.05 mm and equal to orless than 2 mm, for example.

Next, an example of a method of manufacturing the semiconductor deviceof the first embodiment will be described.

The semiconductor package 100 of the first embodiment is manufactured byusing a transfer molding method.

FIGS. 3 to 9 are schematic cross-sectional views showing an example ofthe method of manufacturing the semiconductor device of the firstembodiment. FIGS. 3, 5, 6, 8, and 9 are cross-sectional views parallelto the flow direction of the resin. FIGS. 4A, 4B, 7A, and 7B arecross-sectional views perpendicular to the flow direction of the resin.FIG. 4A is a cross-sectional view taken along the line FF′ of FIG. 3 .FIG. 4B is a cross-sectional view taken along the line GG′ of FIG. 3 .FIG. 7A is a cross-sectional view taken along the line HH′ of FIG. 6 .FIG. 7B is a cross-sectional view taken along the line II′ of FIG. 6 .

First, a lead frame including a plurality of die pads 12 to which thesemiconductor chip 10 is fixed is interposed by a mold formed by anupper mold 31 and a lower mold 32. The lead frame including a pluralityof die pads 12 to which the semiconductor chip 10 is fixed is interposedbetween the upper mold 31 and the lower mold 32 (FIG. 3 ). In FIGS. 3 to9 , the lead frame of portions other than the die pads 12 is not shown.

By combining the upper mold 31 and the lower mold 32, a plurality ofcavities 34 and a through gate 36 connecting the adjacent cavities 34 toeach other are formed (FIGS. 4A and 4B). The die pad 12 to which thesemiconductor chip 10 is fixed is disposed in the cavity 34.

FIG. 4A is a cross-sectional view including the through gate 36. FIG. 4Bis a cross-sectional view including the cavity 34.

The cross-sectional area of the through gate 36 on the cross sectionperpendicular to the flow direction of the resin is equal to or morethan 10% of the maximum cross-sectional area of the cavity 34 on thecross section perpendicular to the flow direction of the resin. Forexample, the area of the cross section of the cavity 34 shown in FIG. 4Bis the maximum cross-sectional area of the cavity 34. For example, thearea of the cross section of the through gate 36 shown in FIG. 4A isequal to or more than 10% and equal to or less than 50% of the area ofthe cross section of the cavity 34 shown in FIG. 4B.

The maximum cross-sectional area of the cavity 34 is equal to or morethan 6 mm².

Then, a molten resin 38 is filled in the cavity 34 from a plunger (notshown) (FIG. 5 ). The resin 38 flows between the cavities 34 through thethrough gate 36. The resin 38 is, for example, an epoxy resin.

After all the cavities 34 are filled with the resin 38, the resin 38 iscooled and cured (FIGS. 6, 7A, and 7B). As shown in FIG. 7A, the curedresin 38 remains in the through gate. A part of the resin 38 remainingin the through gate becomes the first protruding portion 18 a and thesecond protruding portion 18 b of the semiconductor package 100. Theresin 38 filled in the cavity 34 shown in FIG. 7B becomes the sealingresin 18 of the semiconductor package 100.

Then, the upper mold 31 and the lower mold 32 are separated from thecured resin 38 (FIG. 8 ).

Then, the resin 38 remaining in the through gate is cut by the laserbeam (FIG. 9 ). By cutting the resin 38 remaining in the through gate,the first protruding portion 18 a and the second protruding portion 18 bare formed.

By the manufacturing method described above, a plurality ofsemiconductor packages 100 according to the first embodiment are formed.

Next, the function and effect of the semiconductor device of the firstembodiment will be described.

FIGS. 10A, 10B, and 10C are schematic diagrams of a comparative exampleof the semiconductor device of the first embodiment. FIG. 10A is a topview. FIG. 10B is a cross-sectional view. FIG. 10B is a cross-sectionalview taken along the line AA′ of FIG. 10A. FIG. 10C is a cross-sectionalview. FIG. 10C is a cross-sectional view taken along the line BB′ ofFIG. 10A.

FIGS. 10A, 10B, and 10C are diagrams corresponding to FIGS. 1A, 1B, and1C of the semiconductor device of the first embodiment.

FIGS. 11A, 11B, and 11C are schematic cross-sectional views of acomparative example of the semiconductor device of the first embodiment.FIG. 11A is a cross-sectional view taken along the line CC′ of FIG. 10A.FIG. 11B is a cross-sectional view taken along the line DD′ of FIG. 10A.FIG. 11C is a cross-sectional view taken along the line EE′ of FIG. 10A.

FIGS. 11A, 11B, and 11C are diagrams corresponding to FIGS. 2A, 2B, and2C of the semiconductor device of the first embodiment.

The comparative example of the semiconductor device of the firstembodiment is a semiconductor package 900 in which a semiconductor chipis resin-sealed. The semiconductor package 900 includes thesemiconductor chip 10, the die pad 12, the lead portion 14, the bondingwire 16, and the sealing resin 18.

The semiconductor package 900 of the comparative example is differentfrom the semiconductor package 100 of the first embodiment in that thecross-sectional area of the first protruding portion 18 a on the crosssection perpendicular to the first direction is less than 10% of themaximum cross-sectional area of the sealing resin 18 on the crosssection perpendicular to the first direction. For example, the area ofthe cross section of the sealing resin 18 shown in FIG. 11C is themaximum cross-sectional area of the sealing resin 18. For example, thearea of the cross section of the first protruding portion 18 a shown inFIG. 11A is less than 10% of the area of the cross section of thesealing resin 18 shown in FIG. 11C.

In addition, the semiconductor package 900 of the comparative example isdifferent from the semiconductor package 100 of the first embodiment inthat the cross-sectional area of the second protruding portion 18 b onthe cross section perpendicular to the first direction is less than 10%of the maximum cross-sectional area of the sealing resin 18 on the crosssection perpendicular to the first direction. For example, the area ofthe cross section of the second protruding portion 18 b shown in FIG.11B is less than 10% of the area of the cross section of the sealingresin 18 shown in FIG. 11C.

In the manufacturing method of the comparative example of thesemiconductor device of the first embodiment, the shapes of portions ofthe upper mold 31 and the lower mold 32 forming the through gate aredifferent from those in the manufacturing method of the semiconductordevice of the first embodiment.

FIGS. 12A, 12B, and 13 are schematic cross-sectional views showing anexample of the manufacturing method of the comparative example of thesemiconductor device of the first embodiment. FIGS. 12A and 12B arecross-sectional views perpendicular to the flow direction of the resin.FIG. 13 is a cross-sectional view parallel to the flow direction of theresin. FIGS. 12A and 12B are diagrams corresponding to FIGS. 4A and 4Bof the method of manufacturing the semiconductor device of the firstembodiment. In addition, FIG. 13 is a diagram corresponding to FIG. 8 ofthe method of manufacturing the semiconductor device of the firstembodiment.

FIG. 12A is a cross-sectional view including the through gate 36. FIG.12B is a cross-sectional view including the cavity 34.

The cross-sectional area of the through gate 36 on the cross sectionperpendicular to the flow direction of the resin is less than 10% of themaximum cross-sectional area of the cavity 34 on the cross sectionperpendicular to the flow direction of the resin. For example, the areaof the cross section of the cavity 34 shown in FIG. 12B is the maximumcross-sectional area of the cavity 34. For example, the area of thecross section of the through gate 36 shown in FIG. 12A is less than 10%of the area of the cross section of the cavity 34 shown in FIG. 12B.

The maximum cross-sectional area of the cavity 34 is equal to or morethan 6 mm².

As shown in FIG. 13 , in the manufacturing method of the comparativeexample, when the upper mold 31 and the lower mold 32 are separated fromthe cured resin 38, a part 38 x of the resin may stick to the portionsof the upper mold 31 and the lower mold 32 that form the through gate.

If the part 38 x of the resin sticks to the portions of the upper mold31 and the lower mold 32 that form the through gate, for example, whenthe next semiconductor package 900 is continuously formed, the effectivecross-sectional area of the through gate may be decreased to cause poorfilling of the resin 38. Therefore, for example, the yield of thesemiconductor package 900 is reduced, and the productivity of thesemiconductor package 900 is reduced.

In addition, if the part 38 x of the resin sticks to the portions of theupper mold 31 and the lower mold 32 that form the through gate, forexample, before the next semiconductor package 900 is continuouslyformed, cleaning of the upper mold 31 and the lower mold 32 is required.Therefore, the productivity of the semiconductor package 900 is reduced.

It is considered that the sticking of the resin to the mold occursbecause the resin is dehydrated and condensed and accordingly the moldand the resin are bonded by a strong covalent bond. An adhesion aid isadded to the resin that fills the cavity, for example, in order toimprove the adhesion to the lead frame or the like. When the resin iscured, the mold and the resin are bonded by hydrogen bonds due to theaction of the adhesion aid, and accordingly, the adhesion between themold and the resin is improved.

Conceivably, in the case of the manufacturing method of the comparativeexample, since the pressure or viscosity of the resin increases at thethrough gate, dehydration condensation of the resin occurs, andaccordingly, the mold and the resin are bonded by a covalent bondstronger than the hydrogen bond and the resin sticks to the mold.

As a result of the study by the inventor, it has been clarified that thepressure and viscosity of the resin at the through gate depend on theratio of the cross-sectional area of the through gate to the maximumcross-sectional area of the cavity. Then, it has been clarified that thepressure or viscosity of the resin at the through gate can be reduced byincreasing the ratio of the cross-sectional area of the through gate tothe maximum cross-sectional area of the cavity. Therefore, it has beenclarified that, by increasing the above ratio, the dehydrationcondensation of the resin can be suppressed and accordingly the stickingof the resin to the mold at the through gate can be suppressed.

As a result of the study by the inventor, it has been clarified that thesticking of the resin to the mold at the through gate can be suppressedby setting the cross-sectional area of the through gate on the crosssection perpendicular to the flow direction of the resin to be equal toor more than 10% of the maximum cross-sectional area of the cavity onthe cross section perpendicular to the flow direction of the resin.

In the related art, the cross-sectional area of the through gate isoptimized from the viewpoints of the filling speed of the cavity, thework efficiency of cutting the resin in the through gate portion by thelaser beam, and the like. Now, it has been found that thecross-sectional area of the through gate needs to be optimized from theviewpoint of suppressing the sticking of the resin to the mold at thethrough gate.

In particular, when the maximum cross-sectional area of the cavity isequal to or more than 6 mm², the cross-sectional area of the throughgate is less than 10% of the maximum cross-sectional area of the cavityin the known method for optimizing the cross-sectional area of thethrough gate.

In the semiconductor package 100 of the first embodiment, thecross-sectional area of the first protruding portion 18 a on the crosssection perpendicular to the first direction is equal to or more than10% of the maximum cross-sectional area of the sealing resin 18 on thecross section perpendicular to the first direction. In addition, thecross-sectional area of the second protruding portion 18 b on the crosssection perpendicular to the first direction is equal to or more than10% of the maximum cross-sectional area of the sealing resin 18 on thecross section perpendicular to the first direction.

The semiconductor package 100 is manufactured by using a mold in whichthe cross-sectional area of the through gate 36 on the cross sectionperpendicular to the flow direction of the resin 38 is equal to or morethan 10% of the maximum cross-sectional area of the cavity 34 on thecross section perpendicular to the flow direction of the resin 38.Therefore, the sticking of the resin to the mold at the through gatewhen manufacturing the semiconductor package 100 is suppressed. As aresult, the productivity of the semiconductor package 100 is improved.

In the semiconductor package 100, the distance (d3 in FIG. 2C) betweenthe top surface tf and the bottom surface bf is preferably equal to ormore than 1 mm. In other words, the thickness of the sealing resin 18 inthe semiconductor package 100 is preferably equal to or more than 1 mm.The configuration of the semiconductor package 100 is particularlyeffective when the thickness of the sealing resin 18 is equal to or morethan 1 mm and the maximum cross-sectional area of the sealing resin 18is large.

From the viewpoint of suppressing the sticking of the resin to the moldat the through gate, the length (d1 in FIG. 2A) of the first protrudingportion 18 a in the second direction is preferably equal to or more than0.1 mm, more preferably equal to or more than 0.2 mm. In addition, fromthe viewpoint of suppressing the sticking of the resin to the mold atthe through gate, the length (d2 in FIG. 2B) of the second protrudingportion 18 b in the second direction is preferably equal to or more than0.1 mm, more preferably equal to or more than 0.2 mm.

From the viewpoint of improving the work efficiency of cutting the resinin the through gate portion by the laser beam, the length (d1 in FIG.2A) of the first protruding portion 18 a in the second direction ispreferably equal to or less than 1 mm. In addition, from the viewpointof suppressing the sticking of the resin to the mold at the throughgate, the length (d2 in FIG. 2B) of the second protruding portion 18 bin the second direction is preferably equal to or less than 1 mm.

The maximum cross-sectional area of the cavity 34 is preferably equal toor more than 4 mm², more preferably equal to or more than 6 mm², andeven more preferably equal to or more than 10 mm².

As described above, according to the first embodiment, it is possible torealize a semiconductor package with improved productivity.

Second Embodiment

A semiconductor device of a second embodiment is different from thesemiconductor device of the first embodiment in that the shape of atleast one first protruding portion on the cross section perpendicular tothe first direction is a trapezoidal shape having sides facing eachother in the second direction as its top and bottom bases and the shapeof at least one second protruding portion on the cross sectionperpendicular to the first direction is a trapezoidal shape having sidesfacing each other in the second direction as its top and bottom bases.Hereinafter, the description of a part of the content overlapping thefirst embodiment will be omitted.

FIGS. 14A, 14B, and 14C are schematic cross-sectional views of thesemiconductor device of the second embodiment. FIGS. 14A, 14B, and 14Care diagrams corresponding to FIGS. 2A, 2B, and 2C of the semiconductordevice of the first embodiment.

The semiconductor device of the second embodiment is a semiconductorpackage 200 in which a semiconductor chip is resin-sealed.

As shown in FIG. 14A, the shape of the first protruding portion 18 a onthe cross section perpendicular to the first direction is a trapezoidalshape having sides facing each other in the second direction as its topand bottom bases. In addition, as shown in FIG. 14B, the shape of thesecond protruding portion 18 b on the cross section perpendicular to thefirst direction is a trapezoidal shape having sides facing each other inthe second direction as its top and bottom bases.

FIGS. 15A and 15B are schematic cross-sectional views showing an exampleof a method of manufacturing the semiconductor device of the secondembodiment. FIGS. 15A and 15B are cross-sectional views perpendicular tothe flow direction of the resin. FIGS. 15A and 15B are diagramscorresponding to FIGS. 4A and 4B of the method of manufacturing thesemiconductor device of the first embodiment.

FIG. 15A is a cross-sectional view including the through gate 36. FIG.15B is a cross-sectional view including the cavity 34.

As shown in FIG. 15A, on the cross section including the through gate36, the upper mold 31 has a tapered shape. The taper angle is equal toor more than 70° and equal to or less than 85°, for example.

When manufacturing the semiconductor package 200 of the secondembodiment, the upper mold 31 has a tapered shape on the cross sectionincluding the through gate 36. Due to this shape, when the upper mold 31is separated from the cured resin 38, the sticking of the resin to themold is suppressed. Therefore, the productivity of the semiconductorpackage 200 is further improved as compared with the semiconductorpackage 100.

As described above, according to the second embodiment, it is possibleto realize a semiconductor package with improved productivity.

Third Embodiment

A semiconductor device of a third embodiment is different from thesemiconductor device of the first embodiment in that the sealing resincontains inorganic particles, the length of at least one firstprotruding portion in the second direction is equal to or more thantwice the average particle diameter of the inorganic particles, and thelength of at least one second protruding portion in the second directionis equal to or more than twice the average particle diameter of theinorganic particles. Hereinafter, the description of a part of thecontent overlapping the first embodiment will be omitted.

FIGS. 16A, 16B, and 16C are schematic diagrams of the semiconductordevice of the third embodiment. FIG. 16A is a top view. FIG. 16B is across-sectional view. FIG. 16B is a cross-sectional view taken along theline AA′ of FIG. 16A. FIG. 16C is a cross-sectional view. FIG. 16C is across-sectional view taken along the line BB′ of FIG. 16A.

FIGS. 16A, 16B, and 16C are diagrams corresponding to FIGS. 1A, 1B, and1C of the semiconductor device of the first embodiment.

The semiconductor device of the third embodiment is a semiconductorpackage 300 in which a semiconductor chip is resin-sealed. Thesemiconductor package 300 includes a semiconductor chip 10, a die pad12, a lead portion 14, a bonding wire 16, and a sealing resin 18.

As shown in FIGS. 16B and 16C, the sealing resin 18 contains inorganicparticles 18 p. The inorganic particle 18 p is a so-called filler.

The inorganic particle 18 p has, for example, a function of reducing thedifference in the coefficient of thermal expansion between thesemiconductor chip 10 and the sealing resin 18 to suppress thegeneration of stress in the semiconductor package 300. By suppressingthe generation of stress in the semiconductor package 300, for example,the occurrence of poor connection between the semiconductor chip 10 andthe bonding wire 16 or the occurrence of poor connection between thelead portion 14 and the bonding wire 16 is suppressed. Therefore, thereliability of the semiconductor package 300 is improved.

The inorganic particle 18 p is, for example, a silica particle. Theaverage particle diameter of the inorganic particles 18 p is equal to ormore than 30 μm and equal to or less than 100 μm, for example. Theparticle diameter of the inorganic particle 18 p is defined as themaximum diameter of the particles, for example. The average particlediameter of the inorganic particles 18 p can be obtained, for example,by calculating the maximum diameter of each particle by image processingin a cross-sectional image of the sealing resin 18 obtained by SEM andcalculating the average value thereof.

For example, if the size of the through gate is smaller than theparticle diameter of each inorganic particle, it is difficult for theinorganic particles to flow through the through gate when manufacturinga semiconductor package. Therefore, the pressure or viscosity of theresin at the through gate may increase to cause the sticking of theresin to the mold at the through gate.

In the semiconductor package 300 of the third embodiment, the length (d1in FIG. 16B) of the first protruding portion 18 a in the seconddirection is equal to or more than twice the average particle diameterof the inorganic particles. In addition, the length (d2 in FIG. 16B) ofthe second protruding portion 18 b in the second direction is equal toor more than twice the average particle diameter of the inorganicparticles.

Therefore, it is possible to suppress an increase in the pressure orviscosity of the resin at the through gate when manufacturing thesemiconductor package 300. As a result, the productivity of thesemiconductor package 300 is improved.

From the viewpoint of suppressing an increase in the pressure orviscosity of the resin at the through gate, it is more preferable thatthe length (d1 in FIG. 16B) of the first protruding portion 18 a in thesecond direction is equal to or more than three times the averageparticle diameter of the inorganic particles. In addition, it is morepreferable that the length (d2 in FIG. 16B) of the second protrudingportion 18 b in the second direction is equal to or more than threetimes the average particle diameter of the inorganic particles.

From the viewpoint of suppressing an increase in the pressure orviscosity of the resin at the through gate, it is preferable that thelength of the first protruding portion 18 a in the third direction isequal to or more than twice the average particle diameter of theinorganic particles. In addition, it is preferable that the length ofthe second protruding portion 18 b in the third direction is equal to ormore than twice the average particle diameter of the inorganicparticles.

As described above, according to the third embodiment, it is possible torealize a semiconductor package with improved productivity.

Fourth Embodiment

A semiconductor device of a fourth embodiment is different from thesemiconductor device of the first embodiment in that there are at leasttwo first protruding portions and there are at least two secondprotruding portions. Hereinafter, the description of a part of thecontent overlapping the first embodiment will be omitted.

FIGS. 17A, 17B, and 17C are schematic diagrams of the semiconductordevice of the fourth embodiment. FIG. 17A is a top view. FIG. 17B is across-sectional view. FIG. 17B is a cross-sectional view taken along theline AA′ of FIG. 17A. FIG. 17C is a cross-sectional view. FIG. 17C is across-sectional view taken along the line BB′ of FIG. 17A.

FIGS. 17A, 17B, and 17C are diagrams corresponding to FIGS. 1A, 1B, and1C of the semiconductor device of the first embodiment.

FIGS. 18A, 18B, and 18C are schematic cross-sectional views of thesemiconductor device of the fourth embodiment. FIG. 18A is across-sectional view taken along the line CC′ of FIG. 17A. FIG. 18B is across-sectional view taken along the line DD′ of FIG. 17A. FIG. 18C is across-sectional view taken along the line EE′ of FIG. 17A.

FIGS. 18A, 18B, and 18C are diagrams corresponding to FIGS. 2A, 2B, and2C of the semiconductor device of the first embodiment.

The semiconductor device of the fourth embodiment is a semiconductorpackage 400 in which a semiconductor chip is resin-sealed. Thesemiconductor package 400 includes a semiconductor chip 10, a die pad12, a lead portion 14, a bonding wire 16, and a sealing resin 18.

The sealing resin 18 has a first protruding portion 18 a 1, a firstprotruding portion 18 a 2, a second protruding portion 18 b 1, and asecond protruding portion 18 b 2.

On the first side surface sf1 of the sealing resin 18, two firstprotruding portions of the first protruding portion 18 a 1 and the firstprotruding portion 18 a 2 are provided. In addition, on the second sidesurface sf2 of the sealing resin 18, two second protruding portions ofthe second protruding portion 18 b 1 and the second protruding portion18 b 2 are provided.

The sum of the cross-sectional area of the first protruding portion 18 a1 and the cross-sectional area of the first protruding portion 18 a 2 onthe cross section perpendicular to the first direction is equal to ormore than 10% and equal to or less than 50% of the maximumcross-sectional area of the sealing resin 18 on the cross sectionperpendicular to the first direction. For example, the area of the crosssection of the sealing resin 18 shown in FIG. 18C is the maximumcross-sectional area of the sealing resin 18. For example, the sum ofthe cross-sectional area of the first protruding portion 18 a 1 and thecross-sectional area of the first protruding portion 18 a 2 shown inFIG. 18A is equal to or more than 10% and equal to or less than 50% ofthe area of the cross section of the sealing resin 18 shown in FIG. 18C.

In addition, the sum of the cross-sectional area of the secondprotruding portion 18 b 1 and the cross-sectional area of the secondprotruding portion 18 b 2 on the cross section perpendicular to thefirst direction is equal to or more than 10% and equal to or less than50% of the maximum cross-sectional area of the sealing resin 18 on thecross section perpendicular to the first direction. For example, the sumof the cross-sectional area of the second protruding portion 18 b 1 andthe cross-sectional area of the second protruding portion 18 b 2 shownin FIG. 18B is equal to or more than 10% and equal to or less than 50%of the area of the cross section of the sealing resin 18 shown in FIG.18C.

The maximum cross-sectional area of the sealing resin 18 is equal to ormore than 6 mm².

In addition, the number of first protruding portions and the number ofsecond protruding portions may be equal to or more than three. Inaddition, each of the first protruding portion and the second protrudingportion may have a trapezoidal shape having sides facing each other inthe second direction as its top and bottom bases.

The position of the first protruding portion and the position of thesecond protruding portion are, for example, plane-symmetrical withrespect to a plane perpendicular to the first direction. By making theposition of the through gate symmetrical, the flow of resin flowingthrough the cavity is stabilized, so that it is possible to fill theresin with less bias.

As described above, according to the fourth embodiment, it is possibleto realize a semiconductor package with improved productivity.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the inventions. Indeed, the semiconductor device describedherein may be embodied in a variety of other forms; furthermore, variousomissions, substitutions and changes in the form of the devices andmethods described herein may be made without departing from the spiritof the inventions. The accompanying claims and their equivalents areintended to cover such forms or modifications as would fall within thescope and spirit of the inventions.

What is claimed is:
 1. A semiconductor device, comprising: a die pad; asemiconductor chip fixed on the die pad; and a sealing resin coveringthe semiconductor chip and at least a part of the die pad, the sealingresin including a first side surface, a second side surface, a bottomsurface, and a top surface, the second side surface facing the firstside surface in a first direction, the top surface facing the bottomsurface in a second direction, the sealing resin including at least onefirst protruding portion provided on a side of the first side surfaceand at least one second protruding portion provided on a side of thesecond side surface, a cross-sectional area of the at least one firstprotruding portion on a cross section perpendicular to the firstdirection being equal to or more than 10% of a maximum cross-sectionalarea of the sealing resin on a cross section perpendicular to the firstdirection, a cross-sectional area of the at least one second protrudingportion on a cross section perpendicular to the first direction beingequal to or more than 10%; of the maximum cross-sectional area, and themaximum cross-sectional area being equal to or more than 6 mm².
 2. Thesemiconductor device according to claim 1, wherein a distance betweenthe top surface and the bottom surface is equal to or more than 1 mm. 3.The semiconductor device according to claim 1, wherein a length of theat least one first protruding portion in the second direction is equalto or more than 0.1 mm, and a length of the at least one secondprotruding portion in the second direction is equal to or more than 0.1mm.
 4. The semiconductor device according to claim 1, wherein a shape ofthe at least one first protruding portion on a cross sectionperpendicular to the first direction is a trapezoidal shape having sidesfacing each other in the second direction as its top and bottom bases,and a shape of the at least one second protruding portion on a crosssection perpendicular to the first direction is a trapezoidal shapehaving sides facing each other in the second direction as its top andbottom bases.
 5. The semiconductor device according to claim 1, whereinthe sealing resin contains inorganic particles, a length of the at leastone first protruding portion in the second direction is equal to or morethan twice an average particle diameter of the inorganic particles, anda length of the at least one second protruding portion in the seconddirection is equal to or more than twice the average particle diameterof the inorganic particles.
 6. The semiconductor device according toclaim 5, wherein the inorganic particles are silica particles.
 7. Thesemiconductor device according to claim 1, wherein number of the atleast one first protruding portion is equal to or more than two, andnumber of the at least second protruding portion is equal to or morethan two.
 8. The semiconductor device according to claim 1, wherein thesealing resin contains an epoxy resin.
 9. The semiconductor deviceaccording to claim 2, wherein a length of the at least one firstprotruding portion in the second direction is equal to or more than 0.1mm, and a length of the at least one second protruding portion in thesecond direction is equal to or more than 0.1 mm.
 10. The semiconductordevice according to claim 9, wherein a shape of the at least one firstprotruding portion on a cross section perpendicular to the firstdirection is a trapezoidal shape having sides facing each other in thesecond direction as its top and bottom bases, and a shape of the atleast one second protruding portion on a cross section perpendicular tothe first direction is a trapezoidal shape having sides facing eachother in the second direction as its top and bottom bases.